11 March 2008 Free modulation of defect states in multilayer structures consisting of epsilon-negative material and mu-negative material
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Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69843S (2008) https://doi.org/10.1117/12.792246
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China
Abstract
By means of introducing defect layers into multilayer structures composed by epsilon-negative material and mu-negative material, the free modulation of single and double localized modes in zero-φeff gap is realized respectively through adjusting the thickness of different kinds of defect layers in two designed structures. In addition, the defect modes in the zero-φeff gap, being distinct from those in the Bragg gap, have the property of insensitivity to incident angle and polarization in some degree, which would be applied widely in tunable omnidirectional filters.
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Qiong Wang, Changchun Yan, Lingling Zhang, Yiping Cui, "Free modulation of defect states in multilayer structures consisting of epsilon-negative material and mu-negative material", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69843S (11 March 2008); doi: 10.1117/12.792246; https://doi.org/10.1117/12.792246
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