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6 May 2008 Vertical microcavities based on photonic crystal mirrors for III-V/Si integrated microlasers
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Abstract
The on-coming photonic layer of CMOS integrated circuits needs efficient light sources to treat and transmit the flow of data. We develop new configurations of III-V/Si vertical cavity lasers coupled to silicon optical waveguides using mirror/coupler based on photonic crystals. These devices can be fabricated using fully CMOS-compatible technological steps. Using this approach, the optical gain is provided by the III-V material, while all the remaining part of the optical cavity is in silicon. The output coupling to the sub-µm waveguides of the CMOS optical layer can then be inherently optimised since the laser mirror/coupler and the Si output waveguides will be realised together during the same fabrication step. It has been demonstrated that photonic crystals membrane can act as very efficient reflectors (PCM-mirrors) for vertical microresonators. In this communication, the design of a vertical cavity microlaser based on these PCM-mirrors will be presented. We will show that high Q-factors (>10000) along with strong vertical and lateral confinements can be achieved. As a first demonstration, experimental results on silicon PhC-mirrors and associated vertical cavities will be discussed, showing Q factors larger than 2000. Finally, theoretical results on the coupling between such cavities and a silicon micro-waveguide will be presented.
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Lydie Ferrier, Salim Boutami, Fabien Mandorlo, Xavier Letartre, Pedro Rojo Romeo, Pierre Viktorovitch, Philippe Gilet, Badhise Ben Bakir, Philippe Grosse, Jean-Marc Fedeli, and Alexei Chelnokov "Vertical microcavities based on photonic crystal mirrors for III-V/Si integrated microlasers", Proc. SPIE 6989, Photonic Crystal Materials and Devices VIII, 69890W (6 May 2008); https://doi.org/10.1117/12.781328
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