6 May 2008 Vertical microcavities based on photonic crystal mirrors for III-V/Si integrated microlasers
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Abstract
The on-coming photonic layer of CMOS integrated circuits needs efficient light sources to treat and transmit the flow of data. We develop new configurations of III-V/Si vertical cavity lasers coupled to silicon optical waveguides using mirror/coupler based on photonic crystals. These devices can be fabricated using fully CMOS-compatible technological steps. Using this approach, the optical gain is provided by the III-V material, while all the remaining part of the optical cavity is in silicon. The output coupling to the sub-µm waveguides of the CMOS optical layer can then be inherently optimised since the laser mirror/coupler and the Si output waveguides will be realised together during the same fabrication step. It has been demonstrated that photonic crystals membrane can act as very efficient reflectors (PCM-mirrors) for vertical microresonators. In this communication, the design of a vertical cavity microlaser based on these PCM-mirrors will be presented. We will show that high Q-factors (>10000) along with strong vertical and lateral confinements can be achieved. As a first demonstration, experimental results on silicon PhC-mirrors and associated vertical cavities will be discussed, showing Q factors larger than 2000. Finally, theoretical results on the coupling between such cavities and a silicon micro-waveguide will be presented.
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Lydie Ferrier, Lydie Ferrier, Salim Boutami, Salim Boutami, Fabien Mandorlo, Fabien Mandorlo, Xavier Letartre, Xavier Letartre, Pedro Rojo Romeo, Pedro Rojo Romeo, Pierre Viktorovitch, Pierre Viktorovitch, Philippe Gilet, Philippe Gilet, Badhise Ben Bakir, Badhise Ben Bakir, Philippe Grosse, Philippe Grosse, Jean-Marc Fedeli, Jean-Marc Fedeli, Alexei Chelnokov, Alexei Chelnokov, } "Vertical microcavities based on photonic crystal mirrors for III-V/Si integrated microlasers", Proc. SPIE 6989, Photonic Crystal Materials and Devices VIII, 69890W (6 May 2008); doi: 10.1117/12.781328; https://doi.org/10.1117/12.781328
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