1 May 2008 Challenging nano-scale stress evaluation in glassy and crystalline semiconductor heterostructures
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Quantitative experimental assessments of stress/strain with sub-micrometer spatial resolution are shown in both crystalline and amorphous structures of a metal oxide semiconductor (MOS), consisting of Si and SiOx, respectively. A piezo-spectroscopic (PS) approach, based on the wavelength shift of a spectroscopic band in a solid in response to an applied strain or stress, has been used throughout this investigation. Although the PS behavior in such different structures obeyed completely different physical rules, its rationalization gave access to stress/strain information, regardless of the particular spectroscopic transition involved. In this paper, we applied two complementary PS analytic procedures suitable for MOS semiconductor devices: (i) using the LO Raman transition for rationalizing the stress state on the crystalline-Si side of the device; and, (ii) using the electro-stimulated spectrum of oxygen point defects for analyzing the amorphous SiOx side of the device. As a further step, in this study, we challenged a nanometer-scale spatial resolution in stress assessments by applying spatially resolved PS procedures, which involved deconvolution of both laser and electron probes in the respective materials.
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Giuseppe Pezzotti, Giuseppe Pezzotti, Andrea Leto, Andrea Leto, Alessandro Alan Porporati, Alessandro Alan Porporati, Marco Deluca, Marco Deluca, Giancarlo Righini, Giancarlo Righini, } "Challenging nano-scale stress evaluation in glassy and crystalline semiconductor heterostructures", Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 69960F (1 May 2008); doi: 10.1117/12.785206; https://doi.org/10.1117/12.785206

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