1 May 2008 Carrier-depletion-based optical modulator integrated in a lateral structure in a SOI waveguide
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A high speed and low loss silicon optical modulator based on carrier depletion has been made. It is based on carrier depletion and consists of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This device has advantages such as a low capacitance and low optical insertion loss. Experimental results are reported. Using a Mach-Zehnder interferometer with 4 mm-long phase shifter, contrast ratio of 14 dB has been obtained with insertion loss of 5 dB. A 3 dB-bandwidth of 10 GHz has been measured at λ = 1.55μm. Driving electrical power is evaluated. For a 5 mm-long active region, driving power is 100 mW at a frequency of 10 GHz. A large contribution of the dissipated power comes from the 50 Ω load at the end of the device. By integrating the modulator and its driver on CMOS chip, the load value could be varied and driving power could be reduced to a few tens of mW.
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Delphine Marris-Morini, Laurent Vivien, Jean Marc Fédéli, Eric Cassan, Gilles Rasigade, Xavier Le Roux, Philippe Lyan, and Suzanne Laval "Carrier-depletion-based optical modulator integrated in a lateral structure in a SOI waveguide", Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 699615 (1 May 2008); doi: 10.1117/12.780999; https://doi.org/10.1117/12.780999

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