1 May 2008 Si/SiGe bound-to-continuum quantum cascade terahertz emitters
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Abstract
A review will be presented of recent work on Si/SiGe heavy-hole to heavy-hole quantum cascade emitters showing progress towards a laser using the bound-to-continuum design for the active region. The sample was grown by low energy plasma enhanced chemical vapour deposition in significantly less time than comparable structures and designs in III-V or Si/SiGe technology using molecular beam epitaxy or more standard chemical vapour deposition techniques. Clear intersubband electroluminescence is demonstrated at 4.2 K between 6.7 and 10.1 THz. This is inside the III-V restrahlung band where III-V materials cannot lase, unlike Group IV materials. A review of waveguide losses will also be presented and some ideas of how to design an active region with gain higher than the waveguide losses will be discussed.
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D. J. Paul, D. J. Paul, G. Matmon, G. Matmon, L. Lever, L. Lever, Z. Ikonić, Z. Ikonić, R. W. Kelsall, R. W. Kelsall, D. Chrastina, D. Chrastina, G. Isella, G. Isella, H. von Känel, H. von Känel, } "Si/SiGe bound-to-continuum quantum cascade terahertz emitters", Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 69961C (1 May 2008); doi: 10.1117/12.785529; https://doi.org/10.1117/12.785529
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