1 May 2008 Si/SiGe bound-to-continuum quantum cascade terahertz emitters
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A review will be presented of recent work on Si/SiGe heavy-hole to heavy-hole quantum cascade emitters showing progress towards a laser using the bound-to-continuum design for the active region. The sample was grown by low energy plasma enhanced chemical vapour deposition in significantly less time than comparable structures and designs in III-V or Si/SiGe technology using molecular beam epitaxy or more standard chemical vapour deposition techniques. Clear intersubband electroluminescence is demonstrated at 4.2 K between 6.7 and 10.1 THz. This is inside the III-V restrahlung band where III-V materials cannot lase, unlike Group IV materials. A review of waveguide losses will also be presented and some ideas of how to design an active region with gain higher than the waveguide losses will be discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Paul, D. J. Paul, G. Matmon, G. Matmon, L. Lever, L. Lever, Z. Ikonić, Z. Ikonić, R. W. Kelsall, R. W. Kelsall, D. Chrastina, D. Chrastina, G. Isella, G. Isella, H. von Känel, H. von Känel, "Si/SiGe bound-to-continuum quantum cascade terahertz emitters", Proc. SPIE 6996, Silicon Photonics and Photonic Integrated Circuits, 69961C (1 May 2008); doi: 10.1117/12.785529; https://doi.org/10.1117/12.785529

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