8 May 2008 Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate
Author Affiliations +
Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 699708 (2008); doi: 10.1117/12.781277
Event: SPIE Photonics Europe, 2008, Strasbourg, France
Abstract
We investigate two types of 405 nm (In, Al)GaN test laser structures (TLSs), one of them grown on SiC substrates, the other grown on low dislocation density freestanding GaN substrates. Measuring the lasing spectra of these structures, we observe an individual behavior depending on the substrate. TLSs on GaN substrates show a broad longitudinal mode spectrum above threshold, whereas TLSs on SiC are lasing only on one mode with various jumps of the laser emission at certain currents. Estimating the gain of each longitudinal mode with the Hakki-Paoli method, we find minute variations of the gain for TLSs on GaN substrate. In contrary, TLSs on SiC substrate show much larger fluctuations of the gain for individual longitudinal modes. Using a rate equation model with nonlinear gain effects, we simulate the longitudinal mode spectrum of both types of TLSs. Once we modify the gain of each longitudinal mode as observed in the gain measurements, the simulated spectra resemble the SiC or GaN substrate TLS spectra.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tobias Meyer, Harald Braun, Ulrich T. Schwarz, Désirée Queren, Marc O. Schillgalies, Stefanie Brüninghoff, Ansgar Laubsch, Uwe Strauß, "Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 699708 (8 May 2008); doi: 10.1117/12.781277; https://doi.org/10.1117/12.781277
PROCEEDINGS
12 PAGES


SHARE
KEYWORDS
Silicon carbide

Gallium nitride

Semiconductor lasers

Laser damage threshold

Quantum wells

Optical simulations

Waveguides

RELATED CONTENT


Back to Top