8 May 2008 Traveling wave modeling of semiconductor ring lasers
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Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 69971B (2008); doi: 10.1117/12.781354
Event: SPIE Photonics Europe, 2008, Strasbourg, France
Abstract
We use the traveling wave model for simulating and analyzing nonlinear dynamics of complex semiconductor ring laser devices. This modeling allows to consider temporal-spatial distributions of the counter-propagating slowly varying optical fields and the carriers, what can be important when studying non-homogeneous ring cavities, propagation of short pulses or fast switching. By performing numerical integration of the model equations we observe several dynamic regimes as well as transitions between them. The computation of ring cavity modes explains some peculiarities of these regimes.
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Mindaugas Radziunas, "Traveling wave modeling of semiconductor ring lasers", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971B (8 May 2008); doi: 10.1117/12.781354; https://doi.org/10.1117/12.781354
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KEYWORDS
Semiconductor lasers

Switching

Instrument modeling

Optical simulations

Semiconductors

Backscatter

Wave propagation

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