19 May 2008 Modelling strategies for semiconductor ring lasers
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Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 69971N (2008); doi: 10.1117/12.780847
Event: SPIE Photonics Europe, 2008, Strasbourg, France
Abstract
We have analyzed experimentally and theoretically the modal properties of a semiconductor ring laser and the wavelength jumps that occur in connection with directional switching above threshold. A transfer matrix analysis allow us to explain the transfer function measurements when amplified spontaneous emission in the cavity is accounted for. Moreover the transfer matrix analysis permits to determine the threshold condition for the laser modes, which split in two branches due to the symmetry breaking imposed by the output coupler and output waveguides. The wavelength jumps displayed by the device above threshold are interpreted with the frequency splitting and threshold difference between these two branches of solutions, together with the redshift of the material gain.
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Antonio Pérez S., Sandor Fürst, Alessandro Scirè, Julien Javaloyes, Salvador Balle, Marc Sorel, "Modelling strategies for semiconductor ring lasers", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971N (19 May 2008); doi: 10.1117/12.780847; http://dx.doi.org/10.1117/12.780847
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KEYWORDS
Semiconductor lasers

Waveguides

Semiconductors

Laser damage threshold

Switching

Modulation

Modeling

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