19 May 2008 Noise properties of semiconductor ring lasers
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Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 69971Q (2008); doi: 10.1117/12.780985
Event: SPIE Photonics Europe, 2008, Strasbourg, France
Abstract
We analyze a rate equation model in the Langevin formulation for the two modes of the electric field and the carrier density, modelling the spontaneous emission noise in a semiconductor ring laser biased in the bidirectional regime. We analytically investigate the influence of complex backscattering coefficient when the two modes are reinterpreted in terms of mode-intensity sum (I-Spectrum) and difference (D-spectrum). The D-spectrum represents the energy exchange between the two counterpropagating modes and it is shaped by the noisy precursor of a Hopf bifurcation influenced mainly by the conservative backscattering. The I-Spectrum reflects the energy exchange between the total field and the medium and behaves similarly to the standard relative intensity noise for single-mode semiconductor lasers. Good agreement between analytical approximation and numerical results is found.
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Antonio Pérez S., Roberta Zambrini, Alessandro Scirè, Pere Colet, "Noise properties of semiconductor ring lasers", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971Q (19 May 2008); doi: 10.1117/12.780985; https://doi.org/10.1117/12.780985
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KEYWORDS
Semiconductor lasers

Backscatter

Semiconductors

Bistable lasers

Laser applications

Numerical simulations

Complex systems

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