Optimization of the wall-plug efficiency of Al-free active region diode lasers at 975 nm

N. Michel; M. Lecomte; O. Parillaud; M. Calligaro; J. Nagle; M. Krakowski

doi:10.1117/12.781398

8 May 2008 Optimization of the wall-plug efficiency of Al-free active region diode lasers at 975 nm

N. Michel, M. Lecomte, O. Parillaud, M. Calligaro, J. Nagle, M. Krakowski

Proceedings Volume 6997, Semiconductor Lasers and Laser Dynamics III; 69971W (2008) https://doi.org/10.1117/12.781398
Event: SPIE Photonics Europe, 2008, Strasbourg, France

Abstract

We have developed two Al-free active region laser structures, which have a high maximum wall-plug efficiency (WPE) of 69% on an uncoated 2 mm x 100 μm single emitter broad area (BA) laser. Both structures include a Large Optical Cavity (LOC) with an optimized doping profile. One structure contains improved interfaces between material layers, and the other one an optimized strain compensated quantum well.

Citation Download Citation

N. Michel, M. Lecomte, O. Parillaud, M. Calligaro, J. Nagle, and M. Krakowski "Optimization of the wall-plug efficiency of Al-free active region diode lasers at 975 nm", Proc. SPIE 6997, Semiconductor Lasers and Laser Dynamics III, 69971W (8 May 2008); https://doi.org/10.1117/12.781398

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