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16 April 2008 Diode pumping of Yb3+:CaGdAlO4
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Abstract
Yb:CaGdAlO4 is a near infrared material which recently demonstrated very interesting features for the development of the next generation of diode-pumped femtosecond lasers. This material presents two main assets as far as diode pumped high power lasers are concerned. First, it has to our best knowledge, the broadest and the flattest emission band of the Yb:doped crystals. This allowed the generation of 68 fs pulses at an average power of 520 mW. The measured thermal conductivity for 2 at. % Yb:CaGdAlO4 is 6.9 and 6.3 W K-1 m-1 along the a and c axis, respectively. These values are very similar to those of the doped Yb:YAG and allow to reach high output power with limited thermal effects. In the present work, we investigate the performance of Yb3+:CaGdAlO4 for ytterbium concentration ranging between 2% and 5%, under low power diode pumping, in order to optimize the absorption and wavelength tunability. Then the 2% Yb:CaGdAlO4 under high power diode pumping (100 W @ 980 nm) has been evaluated in a standard laser cavity and 15 W of output laser power have been obtained for 42 W absorbed.
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P. O. Petit, P. Goldner, B. Viana, J. Boudeile, J. Didierjean, F. Balembois, F. Druon, and P. Georges "Diode pumping of Yb3+:CaGdAlO4", Proc. SPIE 6998, Solid State Lasers and Amplifiers III, 69980Z (16 April 2008); https://doi.org/10.1117/12.783945
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