Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri; Taishi Takenobu; Yohei Yomogida; Takeshi Yamao; Masayuki Yahiro; Shu Hotta; Chihaya Adachi; Yoshihiro Iwasa

doi:10.1117/12.781126

16 April 2008 Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Author Affiliations +

Proceedings Volume 6999, Organic Optoelectronics and Photonics III; 69990Z (2008) https://doi.org/10.1117/12.781126
Event: SPIE Photonics Europe, 2008, Strasbourg, France

Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm² order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Citation Download Citation

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, and Yoshihiro Iwasa "Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal", Proc. SPIE 6999, Organic Optoelectronics and Photonics III, 69990Z (16 April 2008); https://doi.org/10.1117/12.781126

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