Paper
26 April 2008 AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
Pawel E. Malinowski, Joachim John, Anne Lorenz, Patricia Aparicio Alonso, Marianne Germain, Joff Derluyn, Kai Cheng, Gustaaf Borghs, Robert Mertens, Jean Yves Duboz, Fabrice Semond, J.-F. Hochedez, A. BenMoussa
Author Affiliations +
Abstract
We report on the fabrication of Schottky-diode-based Extreme UltraViolet (EUV) photodetectors. The devices were processed on Gallium Nitride (GaN) layers epitaxially grown on 4 inch Silicon (111) substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). Cutoff wavelength was determined together with the spectral responsivity measurements in the Near UltraViolet (NUV) range (200nm to 400nm). Absolute spectral responsivity measurements were performed in the EUV range (5nm to 20nm) with the synchrotron radiation using the facilities of Physikalisch- Technische Bundesanstalt (PTB), located at Berliner Elektronenspeicherring-Gesellschaft fuer Synchrotronstrahlung (BESSY). The described work is done in the framework of the Blind to Optical Light Detectors (BOLD) project supported by the European Space Agency (ESA).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawel E. Malinowski, Joachim John, Anne Lorenz, Patricia Aparicio Alonso, Marianne Germain, Joff Derluyn, Kai Cheng, Gustaaf Borghs, Robert Mertens, Jean Yves Duboz, Fabrice Semond, J.-F. Hochedez, and A. BenMoussa "AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range", Proc. SPIE 7003, Optical Sensors 2008, 70030N (26 April 2008); https://doi.org/10.1117/12.780948
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Extreme ultraviolet

Gallium nitride

Photodetectors

Gold

Silicon

Diodes

Sensors

Back to Top