26 April 2008 AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range
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We report on the fabrication of Schottky-diode-based Extreme UltraViolet (EUV) photodetectors. The devices were processed on Gallium Nitride (GaN) layers epitaxially grown on 4 inch Silicon (111) substrates by Metal-Organic Chemical Vapor Deposition (MOCVD). Cutoff wavelength was determined together with the spectral responsivity measurements in the Near UltraViolet (NUV) range (200nm to 400nm). Absolute spectral responsivity measurements were performed in the EUV range (5nm to 20nm) with the synchrotron radiation using the facilities of Physikalisch- Technische Bundesanstalt (PTB), located at Berliner Elektronenspeicherring-Gesellschaft fuer Synchrotronstrahlung (BESSY). The described work is done in the framework of the Blind to Optical Light Detectors (BOLD) project supported by the European Space Agency (ESA).
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Pawel E. Malinowski, Pawel E. Malinowski, Joachim John, Joachim John, Anne Lorenz, Anne Lorenz, Patricia Aparicio Alonso, Patricia Aparicio Alonso, Marianne Germain, Marianne Germain, Joff Derluyn, Joff Derluyn, Kai Cheng, Kai Cheng, Gustaaf Borghs, Gustaaf Borghs, Robert Mertens, Robert Mertens, Jean Yves Duboz, Jean Yves Duboz, Fabrice Semond, Fabrice Semond, J.-F. Hochedez, J.-F. Hochedez, A. BenMoussa, A. BenMoussa, } "AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength range", Proc. SPIE 7003, Optical Sensors 2008, 70030N (26 April 2008); doi: 10.1117/12.780948; https://doi.org/10.1117/12.780948

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