12 May 2008 Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics
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Proceedings Volume 7005, High-Power Laser Ablation VII; 700504 (2008) https://doi.org/10.1117/12.784094
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States
Femtosecond time-resolved small and wide-angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Following intense optical excitation, a transient liquid state of high compressibility characterized by large-amplitude density fluctuations is observed and the build-up of these fluctuations is measured in real-time. Small-angle scattering measurements reveal the first steps in the nucleation of nanoscale voids below the surface of the semiconductor and support MD simulations of the ablation process.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. M. Lindenberg, A. M. Lindenberg, S. Engemann, S. Engemann, K. J. Gaffney, K. J. Gaffney, K. Sokolowski-Tinten, K. Sokolowski-Tinten, J. Larsson, J. Larsson, D. Reis, D. Reis, P. Lorazo, P. Lorazo, J. B. Hastings, J. B. Hastings, } "Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics", Proc. SPIE 7005, High-Power Laser Ablation VII, 700504 (12 May 2008); doi: 10.1117/12.784094; https://doi.org/10.1117/12.784094

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