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12 May 2008 Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics
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Proceedings Volume 7005, High-Power Laser Ablation VII; 700504 (2008) https://doi.org/10.1117/12.784094
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States
Abstract
Femtosecond time-resolved small and wide-angle x-ray diffuse scattering techniques are applied to investigate the ultrafast nucleation processes that occur during the ablation process in semiconducting materials. Following intense optical excitation, a transient liquid state of high compressibility characterized by large-amplitude density fluctuations is observed and the build-up of these fluctuations is measured in real-time. Small-angle scattering measurements reveal the first steps in the nucleation of nanoscale voids below the surface of the semiconductor and support MD simulations of the ablation process.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. M. Lindenberg, S. Engemann, K. J. Gaffney, K. Sokolowski-Tinten, J. Larsson, D. Reis, P. Lorazo, and J. B. Hastings "Femtosecond x-ray diffuse scattering measurements of semiconductor ablation dynamics", Proc. SPIE 7005, High-Power Laser Ablation VII, 700504 (12 May 2008); https://doi.org/10.1117/12.784094
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