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12 May 2008 Ultrafast dynamic ellipsometry of laser ablated silicon
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Proceedings Volume 7005, High-Power Laser Ablation VII; 70050M (2008) https://doi.org/10.1117/12.782739
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States
Abstract
Ultrafast dynamic ellipsometry, a technique that probes a sample with chirped laser pulses at two angles and with two orthogonal polarizations, was used to measure the effective refractive index across the ablation region of a Si(111) wafer exposed to a 100 fs ablation pulse. The resulting refractive index data show a significant increase in the extinction coefficient, indicative of the melting of silicon.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. A. Bolme, S. D. McGrane, D. S. Moore, and D. J. Funk "Ultrafast dynamic ellipsometry of laser ablated silicon", Proc. SPIE 7005, High-Power Laser Ablation VII, 70050M (12 May 2008); https://doi.org/10.1117/12.782739
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