Nanopulsed laser modification of Ge/Si heterostructures

G. D. Ivlev; E. I. Gatskevich

doi:10.1117/12.782596

14 May 2008 Nanopulsed laser modification of Ge/Si heterostructures

G. D. Ivlev, E. I. Gatskevich

Proceedings Volume 7005, High-Power Laser Ablation VII; 70050U (2008) https://doi.org/10.1117/12.782596
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States

Abstract

Laser-induced phase transitions in a-Ge/Si heterostructures (amorphous Ge films on crystalline Si substrate) have been studied by optical diagnostics and numerical simulation methods. The samples were irradiated by (i) a ruby laser with pulse duration 80 ns (FWHM) and wavelength 694 nm and (ii) an ArF excimer laser (10 ns and 193 nm). Time resolved reflectivity measurements showed the discrepancy in dynamics of reflectivity of probing beam for different regimes of laser irradiation. This discrepancy can be explained by differing kinetics of solid-liquid phase transitions in Ge films: (i) intermediate crystallization or (ii) simultaneous solidification of molten Ge layer from the surface and from the substrate.

Citation Download Citation

G. D. Ivlev and E. I. Gatskevich "Nanopulsed laser modification of Ge/Si heterostructures", Proc. SPIE 7005, High-Power Laser Ablation VII, 70050U (14 May 2008); https://doi.org/10.1117/12.782596

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