14 May 2008 Subpicosecond dielectric breakdown and incubation in TixSi1-xO2 composite films with adjustable bandgap
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Proceedings Volume 7005, High-Power Laser Ablation VII; 70051V (2008); doi: 10.1117/12.785154
Event: High-Power Laser Ablation 2008, 2008, Taos, New Mexico, United States
Abstract
Laser induced breakdown of single-layer, ion-beam sputtered TixSi1-xO2 composite films was studied using single and multiple pulses from a femtosecond Ti:sapphire laser. The bandgap of this coating material can be gradually adjusted with the composition parameter x. A scaling law with respect to the bandgap energy and pulse duration dependence of the single-pulse damage threshold that was observed previously for pure oxide films was found to apply to the composite films as well. The dependence of the damage threshold as a function of pulse number F(N) was similar to the behavior observed for pure oxide films. It was possible to explain the dependence as a function of pulse number using a theoretical model based on the formation and accumulation of defects. The shape of F(N) can be used to estimate the role of shallow traps and deep traps on the multiple-pulse breakdown behavior.
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L. A. Emmert, D. Nguyen, I. Cravetchi, M. Mero, W. Rudolph, M. Jupe, M. Lappschies, K. Starke, D. Ristau, "Subpicosecond dielectric breakdown and incubation in TixSi1-xO2 composite films with adjustable bandgap", Proc. SPIE 7005, High-Power Laser Ablation VII, 70051V (14 May 2008); doi: 10.1117/12.785154; https://doi.org/10.1117/12.785154
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KEYWORDS
Laser damage threshold

Composites

Oxides

Coating

Absorption

Refractive index

Dielectric breakdown

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