29 April 2008 High-power continuous-wave Nd lasers under dioide pumping directly into the 4F3/2 emitting level
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Proceedings Volume 7007, INDLAS 2007: Industrial Laser Applications; 700705 (2008) https://doi.org/10.1117/12.801929
Event: INDLAS 2007: Industrial Laser Applications, 2007, Bran, Romania
Abstract
Output performances of Nd-based lasers that were pumped with diode lasers directly into the 4F3/2 emitting level has been investigated at various wavelengths of emission. The end-pumping scheme was used to demonstrate efficient laser emission in the watt-range at 0.94 µm, 1.06 µm and 1.34 µm in Nd:YAG pumped at 885 nm. Nd:YVO4 and Nd:GdVO4 thin-disk lasers with high power emission at 1.06 µm were realized under multi-pass pumping at 880 nm, and for the first time laser emission at 0.91 µm was achieved in this configuration. Intracavity frequency-doubled lasers with emission in the green and blue spectral ranges were obtained. Thus, an end-pumped Nd:GdVO4 laser with 5 W output power at 0.53 µm, and Nd:YVO4 and Nd:GdVO4 thin-disk lasers with output power in excess of 4 W at 0.53 µm were realized. Nd-vanadates thin-disk lasers with ~1 W power into 0.45 µm 'deep-blue' visible spectra were demonstrated. Comparative results with the traditional pumping at 0.81 µm into the highly absorbing 4F5/2 level are presented, proving the advantage of the direct 4F3/2 pumping.
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Nicolaie Pavel, Nicolaie Pavel, Voicu Lupei, Voicu Lupei, } "High-power continuous-wave Nd lasers under dioide pumping directly into the 4F3/2 emitting level", Proc. SPIE 7007, INDLAS 2007: Industrial Laser Applications, 700705 (29 April 2008); doi: 10.1117/12.801929; https://doi.org/10.1117/12.801929
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