22 April 2008 Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry
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Proceedings Volume 7008, Eighth International Conference on Correlation Optics; 70081B (2008) https://doi.org/10.1117/12.797224
Event: Eighth International Conference on Correlation Optics, 2007, Chernivsti, Ukraine
Abstract
Methods of two- and three-crystal X-ray high-resolution diffractometry were used to investigate structural changes in Cz-Si single crystals irradiated with high-energy electrons (E=18 MeV). The results of experimental investigation were interpreted by means of a generalized dynamic theory of X-ray diffraction in real crystals with randomly distributed microdefects of various types and a damaged surface layer. As dominant defects, disc-shaped and spherical clusters - SiO2 precipitates, as well as dislocation loops were used.
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V. V. Dovganyuk, V. V. Dovganyuk, T. V. Lytvynchuk, T. V. Lytvynchuk, V. V. Slobodyan, V. V. Slobodyan, M. I. Fodchuk, M. I. Fodchuk, "Defect structure changes in the single Si-crystals after irradiation by high-energy electrons and long natural aging by high-resolution three-crystal x-ray diffractometry", Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081B (22 April 2008); doi: 10.1117/12.797224; https://doi.org/10.1117/12.797224
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