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22 April 2008 Structural changes in graded band-gap epitaxial layers HgCdTe after ion implantation
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Proceedings Volume 7008, Eighth International Conference on Correlation Optics; 70081C (2008) https://doi.org/10.1117/12.797225
Event: Eighth International Conference on Correlation Optics, 2007, Chernivsti, Ukraine
Abstract
The results of X-ray AFM, SEM, and SIMS studies of near-surface regions of HgCdTe graded-gap epitaxial layers obtained by high-temperature annealing in vapour of the main components have been presented. We used ISOVPE layers of HgCdTe grown on CdTe substrates the surface of which was implanted by As ions. The AFM investigation has shown that the morphology of surfaces of HgCdTe structures obtained at the same conditions is significantly influenced by the crystal orientation of the initial substrates of CdTe. By means of SIMS and SEM analysis a substantial increase of the molar content of HgCdTe solid solution on the surface of ion-implanted epitaxial layers after high-temperature annealing has been observed. It is shown that large gradients of composite HgCdTe solid solution are formed in the near-surface regions of the epitaxial layers due to small changes in the thermodynamically equilibrium conditions of the process of high-temperature annealing.
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R. A. Zaplitnyy, I. M. Fodchuk, T. A. Kazemirskiy, A. P. Vlasov, O. Yu. Bonchyk, A. Barcz, P. S. Zieba, Z. Swiatek, and W. Maziarz "Structural changes in graded band-gap epitaxial layers HgCdTe after ion implantation", Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081C (22 April 2008); https://doi.org/10.1117/12.797225
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