22 April 2008 Optoelectronic properties of ion-etched silicon surfaces
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Proceedings Volume 7008, Eighth International Conference on Correlation Optics; 70081D (2008) https://doi.org/10.1117/12.797227
Event: Eighth International Conference on Correlation Optics, 2007, Chernivsti, Ukraine
Abstract
The paper studies the influence of mechanical treatment-deformed near-surface crystal layer of silicon surfaces on photoelectric properties of semiconductor optical radiation detectors made on the above surfaces. This layer is removed by the method of ion etching of surfaces by vacuum glow discharge. The basic parameters and characteristics of detectors made on reconstructed surfaces are studied, namely: power characteristic nonlinearity and its dynamic range, luxampere characteristic, dark current and spectral characteristic. Considerable positive effect of such etching on the above parameters and characteristics is established, allowing widely expanded application of these photodetectors in optical investigations.
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V. G. Zhitaryuk, V. G. Zhitaryuk, V. M. Hodovanyuk, V. M. Hodovanyuk, I. V. Doktorovych, I. V. Doktorovych, } "Optoelectronic properties of ion-etched silicon surfaces", Proc. SPIE 7008, Eighth International Conference on Correlation Optics, 70081D (22 April 2008); doi: 10.1117/12.797227; https://doi.org/10.1117/12.797227
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