5 March 2008 Quantum dot photonics: edge emitter, amplifier and VCSEL
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Proceedings Volume 7009, Second International Conference on Advanced Optoelectronics and Lasers; 700902 (2008) https://doi.org/10.1117/12.793286
Event: Second International Conference on Advanced Optoelectronics and Lasers, 2005, Yalta, Ukraine
Abstract
Low transparency current density and improved temperature stability with a large characteristic temperature T0 > 650 K up to 80 °C are demonstrated for 1.3 μm MBE grown InGaAs quantum dot (QD) edge emitting lasers. Digital modulation with an open eye pattern up to 12 Gb/s at room temperature and bit error rate below 10-12 for 10 Gb/s modulation was realized for this wavelength. Semiconductor optical amplifiers based on InGaAs QD gain media achieved a chip gain of 26 dB. A conventionally doped semiconductor DBR QD-VCSEL containing 17 p-modulation doped QD layers demonstrated a cw output power of 1.8 mW and a differential efficiency of 20 % at 20 °C. The maximum -3dB modulation bandwidth at 25 °C was 3 GHz. First MOCVD-grown QD-VCSELs with selectively oxidized DBRs and 9 QD-layers were realized, emitting at 1.1 μm. A cw multimode output power of 1.5 mW, 6 mW in pulsed operation, and an cw external efficiency of 45 % were achieved at 20 °C. The minimum threshold current of a device with 2 μm aperture was 85 μA.
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F. Hopfer, F. Hopfer, M. Kuntz, M. Kuntz, M. Lämmlin, M. Lämmlin, G. Fiol, G. Fiol, N. N. Ledentsov, N. N. Ledentsov, A. R. Kovsh, A. R. Kovsh, S. S. Mikrin, S. S. Mikrin, I. Kaiander, I. Kaiander, V. Haisler, V. Haisler, A. Lochmann, A. Lochmann, A. Mutig, A. Mutig, C. Schubert, C. Schubert, A. Umbach, A. Umbach, V. M. Ustinov, V. M. Ustinov, U. W. Pohl, U. W. Pohl, D. Bimberg, D. Bimberg, } "Quantum dot photonics: edge emitter, amplifier and VCSEL", Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700902 (5 March 2008); doi: 10.1117/12.793286; https://doi.org/10.1117/12.793286
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