5 March 2008 Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics
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Proceedings Volume 7009, Second International Conference on Advanced Optoelectronics and Lasers; 700906 (2008) https://doi.org/10.1117/12.793296
Event: Second International Conference on Advanced Optoelectronics and Lasers, 2005, Yalta, Ukraine
Abstract
The basic problems of the receiving p-n junctions in ion implanted InSb Mg+/InSb after CO2-laser irradiation and in p-InSb and p-InAs after Ruby laser irradiation are represented. Proper Volt-Ampere characteristics are analyzed. The basic physical mechanisms of receiving these structures are discussed too. Basic cause of difference these p-n junctions is various mechanisms of irreversible interaction light and semiconductor (self-absorption for Ruby laser irradiation and "damage"-absorption for CO2-laser irradiation).
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Petro P. Trokhimchuck, "Some electro-physical properties of InSb and InAs layers that were received with the help of methods of relaxed optics", Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700906 (5 March 2008); doi: 10.1117/12.793296; https://doi.org/10.1117/12.793296
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