5 March 2008 Calculation of the spontaneous emission spatial dependency in semiconductor lasers using transmission line model
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Proceedings Volume 7009, Second International Conference on Advanced Optoelectronics and Lasers; 70090A (2008) https://doi.org/10.1117/12.793314
Event: Second International Conference on Advanced Optoelectronics and Lasers, 2005, Yalta, Ukraine
Abstract
In this paper we calculate the spatial dependency of the spontaneous emission in semiconductor laser cavity using a model based on transmission line laser method (TLLM). Results show that in the simple ridge laser structure, the major part of the spontaneous emission occurs at the middle of the cavity and so uniform spontaneous emission can't be assumed.
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Mohammad Razaghi, Mohammad Razaghi, Vahid Ahmadi, Vahid Ahmadi, Behrang Hadian Sihakal Mahalleh, Behrang Hadian Sihakal Mahalleh, Abbas Zarifkar, Abbas Zarifkar, } "Calculation of the spontaneous emission spatial dependency in semiconductor lasers using transmission line model", Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 70090A (5 March 2008); doi: 10.1117/12.793314; https://doi.org/10.1117/12.793314
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