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10 July 2008Design of prototype scientific CMOS image sensors
We present the design and test results of a prototype 4T CMOS image sensor fabricated in 0.18-μm technology
featuring 20 different 6.5 μm pixel pitch designs. We review the measured data which clearly show the impact of the
pixel topologies on sensor performance parameters such as conversion gain, read noise, dark current, full well capacity,
non-linearity, PRNU, DSNU, image lag, QE and MTF. Read noise of less than 1.5e- rms and peak QE greater than
70%, with microlens, are reported.
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Paul Vu, Boyd Fowler, Chiao Liu, Janusz Balicki, Steve Mims, Hung Do, Dan Laxson, "Design of prototype scientific CMOS image sensors," Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 702103 (10 July 2008); https://doi.org/10.1117/12.790229