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10 July 2008 Design of prototype scientific CMOS image sensors
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Abstract
We present the design and test results of a prototype 4T CMOS image sensor fabricated in 0.18-μm technology featuring 20 different 6.5 μm pixel pitch designs. We review the measured data which clearly show the impact of the pixel topologies on sensor performance parameters such as conversion gain, read noise, dark current, full well capacity, non-linearity, PRNU, DSNU, image lag, QE and MTF. Read noise of less than 1.5e- rms and peak QE greater than 70%, with microlens, are reported.
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Paul Vu, Boyd Fowler, Chiao Liu, Janusz Balicki, Steve Mims, Hung Do, and Dan Laxson "Design of prototype scientific CMOS image sensors", Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 702103 (10 July 2008); https://doi.org/10.1117/12.790229
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