22 July 2008 The x-ray performance of high resistivity (high-rho) scientific CCDs
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Abstract
e2v technologies have recently been developing large area (2k*4k), high resistivity (>8 kΩcm) silicon CCDs intended for infrared astronomy. The use of high resistivity silicon allows for a greater device thickness, allowing deeper, or full, depletion across the CCD that significantly improves the red wavelength sensitivity. The increased depletion in these CCDs also improves the quantum efficiency for incident X-ray photons of energies above 5 keV, whilst maintaining spectral resolution. The use of high resistivity silicon would therefore be advantageous for use in future X-ray astronomy missions and other applications. This paper presents the measured X-ray performance of the high resistivity CCD247 for X-ray photons of energies between 5.4 keV to 17.4 keV. Here we describe the laboratory experiment and results obtained to determine the responsivity, noise, effective depletion depth and quantum efficiency of the CCD247.
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Neil Murray, Andrew D. Holland, David Burt, Peter Pool, Paul Jorden, Pritesh Mistry, "The x-ray performance of high resistivity (high-rho) scientific CCDs", Proc. SPIE 7021, High Energy, Optical, and Infrared Detectors for Astronomy III, 70211N (22 July 2008); doi: 10.1117/12.795455; https://doi.org/10.1117/12.795455
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KEYWORDS
X-rays

Charge-coupled devices

Quantum efficiency

Photons

Silicon

Data modeling

Spectral resolution

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