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5 June 2008 Picosecond laser system based on microchip oscillator seed
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Proceedings Volume 7022, Advanced Laser Technologies 2007; 70221B (2008) https://doi.org/10.1117/12.804110
Event: Advanced Laser Technologies 2007, 2007, Levi, Finland
Abstract
A compact near-diffraction-limited picosecond microchip oscillator-amplifier system was developed. When pumped by 0.9-W average power pulsed radiation, the microchip generated 9-μJ energy pulses of 400-ps duration at 1-kHz rate, in a nearly TEM00 transversal mode (beam quality factor, M2 < 1.1). The microchip output was amplified up to 12-mJ pulse-energy at 1-10 Hz repetition rate in a two-pass flash-pumped Nd:YAG amplifier. We used the 1064-nm output beam for nonlinear conversion to 532-nm second harmonic (SH) and 266-nm fourth harmonic (FH). The pulse-energy of SH and FH output was 6-mJ and 1.6-mJ, respectively, which corresponds to 50 % and 13 % conversion efficiency.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Razvan Dabu, Aurel Stratan, Constantin Fenic, Constantin Blanaru, and Laurentiu Rusen "Picosecond laser system based on microchip oscillator seed", Proc. SPIE 7022, Advanced Laser Technologies 2007, 70221B (5 June 2008); https://doi.org/10.1117/12.804110
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