5 June 2008 Pulsed laser deposition and e-beam evaporation of vanadium dioxide thin films for IR-photonics applications
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Proceedings Volume 7022, Advanced Laser Technologies 2007; 70221G (2008) https://doi.org/10.1117/12.804119
Event: Advanced Laser Technologies 2007, 2007, Levi, Finland
Abstract
Vanadium dioxide thin films were prepared on r-plane sapphire substrates by using in-situ pulsed laser deposition (PLD) and by post-annealing pure metallic vanadium films in synthetic air atmosphere by varying the annealing temperature and annealing time. As a result, vanadium oxide thin films with various compositions were produced. Thin films produced by using PLD contained also pure VO2 thin films, while post-annealed films had mixed phase structure of metallic vanadium and vanadium oxides or only different vanadium oxides. SPM surface analysis showed that pulsed laser deposited films were very smooth with Rq < 16.7 nm. The magnitude of metal-insulator transition (MIT) of the optical transmission measured from pulsed laser deposited VO2 thin films was around 50% at the wavelengths of 1.5 and 2.5 μm. Surface roughness of the post-annealed films was high, Rq < 86.1 nm. Although the post-annealed films were non-homogenous phase mixtures containing very little VO2 phase in their structure, some of them showed very good optical responses at IR-wavelengths. At the wavelength of 2.5 μm, optical transition between insulator and conductive states as large as 74% was measured.
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S. Heinilehto, J. Lappalainen, V. Lantto, H. Jantunen, "Pulsed laser deposition and e-beam evaporation of vanadium dioxide thin films for IR-photonics applications", Proc. SPIE 7022, Advanced Laser Technologies 2007, 70221G (5 June 2008); doi: 10.1117/12.804119; https://doi.org/10.1117/12.804119
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