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29 April 2008Correction of the EUV mirror substrate shape by ion beam
In the paper first results of study of etching speed and RMS roughnesses depending on an incidence angle and energy of
ions for Si and Cr/Sc materials are presented. Possibility of variation in parameters of etching process (the incidence
angle, energy of ions and exposition time) allows to pick up the optimum mode providing high speed etching or the
minimal development of a roughness of a surface.
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N. Chkhalo, L. Paramonov, A. Pestov, D. Raskin, N. Salashchenko, "Correction of the EUV mirror substrate shape by ion beam," Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702503 (29 April 2008); https://doi.org/10.1117/12.802349