Correction of the EUV mirror substrate shape by ion beam

N. Chkhalo; L. Paramonov; A. Pestov; D. Raskin; N. Salashchenko

doi:10.1117/12.802349

29 April 2008 Correction of the EUV mirror substrate shape by ion beam

N. Chkhalo; L. Paramonov; A. Pestov; D. Raskin; N. Salashchenko

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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702503 (2008) https://doi.org/10.1117/12.802349
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

In the paper first results of study of etching speed and RMS roughnesses depending on an incidence angle and energy of ions for Si and Cr/Sc materials are presented. Possibility of variation in parameters of etching process (the incidence angle, energy of ions and exposition time) allows to pick up the optimum mode providing high speed etching or the minimal development of a roughness of a surface.

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N. Chkhalo, N. Chkhalo, L. Paramonov, L. Paramonov, A. Pestov, A. Pestov, D. Raskin, D. Raskin, N. Salashchenko, N. Salashchenko, } "Correction of the EUV mirror substrate shape by ion beam", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702503 (29 April 2008); doi: 10.1117/12.802349; https://doi.org/10.1117/12.802349

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