Mask image formation by electron beam deposition from vapor phase

M. A. Bruk; E. N. Zhikharev; S. L. Shevchuk; I. A. Volegova; A. V. Spirin; E. N. Teleshov; V. A. Kalnov; Yu. P. Maishev

doi:10.1117/12.802355

29 April 2008 Mask image formation by electron beam deposition from vapor phase

M. A. Bruk, E. N. Zhikharev, S. L. Shevchuk, I. A. Volegova, A. V. Spirin, E. N. Teleshov, V. A. Kalnov, Yu. P. Maishev

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702508 (2008) https://doi.org/10.1117/12.802355
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Dry resistless process was studied of mask image formation by electron beam deposition from hydrocarbon precursor undecane (C₁₁H₂₄) on substrates of SiO₂ (layer 80 nm) on silicon and cupper (layer 430 nm) on silicon. A mask in form of grating of 5-150 nm height strips was created in a cell introduced into the scanning electron microscope CamScan. Strips thickness δ was considerably more than the beam size and depended on substrate material: for SiO₂ δ=0.6 μm, for Cuδ=2 μm. Strong dependence of growth rate V (at Cu) on the line scan time τ was found out. At beam current 1.0 nA varying τ from 20 ms to 13 s led to 7.4 times decreasing V. This effect most likely is caused by significant diffusion delays at τ=13 s in precursor transport into reaction zone during the pixel time. The ion beam etching of substrates through the deposited mask was carried out. SiO₂ substrate was etched by SF₆ ions, Cu substrate was etched by Ar ions. In both cases etching rate of mask material were close to etching rate of substrate. In mask deposited on SiO₂ thin (about 1 nm) intermediate surface layer was found having significantly more (8-10 times) etching resistance than the basic mask material.

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M. A. Bruk, E. N. Zhikharev, S. L. Shevchuk, I. A. Volegova, A. V. Spirin, E. N. Teleshov, V. A. Kalnov, and Yu. P. Maishev "Mask image formation by electron beam deposition from vapor phase", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702508 (29 April 2008); https://doi.org/10.1117/12.802355

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