The method of thin metal films adhesion increasing for the lowered dimensions structures

N. L. Kazanskiy; V. A. Kolpakov; V. D. Paranin; M. S. Polikarpov

doi:10.1117/12.802364

29 April 2008 The method of thin metal films adhesion increasing for the lowered dimensions structures

N. L. Kazanskiy, V. A. Kolpakov, V. D. Paranin, M. S. Polikarpov

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250H (2008) https://doi.org/10.1117/12.802364
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

An adhesion mechanism of thin copper and chromium films fabricated on the surface of dielectric substrates (silicon dioxide, polycrystalline glass) is studied theoretically and experimentally. It is shown that adhesion increasing is provided by organic molecules dissociation in the boundary pollution layer of the metal - substrate system as a result of thermal balance establishment in thin metal film - atomic layer of organic pollution - substrate surface (Me - C_xH_y - Sub) nanosystem. The maximal adhesion value achieved at process time not less than 3 minutes, current value - 80 mA, accelerating voltage value - 4 kV. Ion-electron Me - C_xH_y - Sub structure bombardment increases thin metal films adhesion not less than in 3.8 ... 10 times. It has been shown that the developed method allows to lower surface cleanliness requirements, to reduce process time in 10 times, to achieve adhesion value in 1.5 - 2 times higher than values reached by traditional methods in which substrates with technologically pure surface are used.

Citation Download Citation

N. L. Kazanskiy, V. A. Kolpakov, V. D. Paranin, and M. S. Polikarpov "The method of thin metal films adhesion increasing for the lowered dimensions structures", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250H (29 April 2008); https://doi.org/10.1117/12.802364

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