Paper
29 April 2008 Method of creation of monomolecular transistor with overhanging electrodes
I. V. Sapkov, E. S. Soldatov, V. G. Elensky
Author Affiliations +
Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250P (2008) https://doi.org/10.1117/12.802415
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
Method of creation of nanogaps between metallic (Au) thin-film electrodes using additional evaporation of metal film on relatively wide preliminary created gap is elaborated and realized. A technique of electrodes "overhanging" by dry etching of a substrate is suggested and realized. Optimal etching parameters are found as well. A technique of limitation of the region for additional metal deposition by special additional PMMA mask with narrow window along line of gaps is suggested and realized. It allows a minimization of probability of parasitic gap shunting. It is shown that elaborated method permits iterative approach to prescribed size of a gap by both decreasing of the gap width by deposition of additional metal on the walls of a wide gap and reconstruction of a gap by electromigration in the case of closing of the gap due to excessive metal deposition. Samples with gap's width less than 10 nm were obtained by such reconstruction of a gap.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. V. Sapkov, E. S. Soldatov, and V. G. Elensky "Method of creation of monomolecular transistor with overhanging electrodes", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250P (29 April 2008); https://doi.org/10.1117/12.802415
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Cited by 3 scholarly publications.
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KEYWORDS
Electrodes

Gold

Metals

Transistors

Polymethylmethacrylate

Photomasks

Silicon

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