29 April 2008 Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactor
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250X (2008) https://doi.org/10.1117/12.802424
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The formation of the TiN/CoSi2 bilayer from the Co/Ti/Si structure in a non-isothermal reactor was analyzed by Auger electron spectrometer. It was concluded in determination of concentration distribution of the Co, Ti and Si atoms in the samples before and after the thermal annealing. The annealing time was equal to 10 sec and 1 min. It is noted, that both the Co and Ti atoms diffuse at opposite directions. The cobalt atoms move through titanium film to silicon surface. On the contrary, the titanium atoms move through cobalt film to surfaces of the sample. After thermal annealing of the samples, located by silicon surface to the heating source, the formation TiN and CoSi2 phases is fixed. The forming of these phases at the annealing of the samples, located by structure Co/Ti to the source of the heating, does not occur. This is conditioned by brilliant metallic surface reflecting of radiated energy. As a result necessary temperature regime, for the formation of both of these phases TiN and CoSi2, was not reached.
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Valery I. Rudakov, Valery N. Gusev, "Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactor", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250X (29 April 2008); doi: 10.1117/12.802424; https://doi.org/10.1117/12.802424
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