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29 April 2008 Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70250Y (2008) https://doi.org/10.1117/12.802425
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
Zirconium oxide (ZrO2) films have been deposited on cleaned and heated p-type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO2 layer on ZrO2/Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si structures with 3÷20-nm-thick dielectric layers were formed by electron-beam evaporation technique. The fixed charge densities in 3-nm-thick YSZ layers are 3x1010 - 3.7x1010cm2, leakage current density at a voltage -1V achieves ~7,9•10-7Α/cm2.
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D. G. Drozdov, I. A. Khorin, V. B. Kopylov, A. A. Orlikovsky, A. E. Rogozhin, and A. G. Vasiliev "Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70250Y (29 April 2008); https://doi.org/10.1117/12.802425
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