29 April 2008 Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiNx dielectrics
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702513 (2008) https://doi.org/10.1117/12.802459
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
Characterisation of three-layer dielectric embedded into MDS-structure (Metal-Dielectric-Silicon) was provided in the dark and under light illumination. In the dark, increasing of differential capacitance, simultaneously, with variation of differential conductivity of MDS-structures was detected. In the light strong changing of capacitance part of impedance was firstly observed, demonstrating decreasing almost to zero values and restoring up to maximal values in narrow bands of voltage applied. Variation of capacitance exceeds significantly so called dielectric layer capacitance, what interpreted as carriers exchanging between substrate and electronic states in SiNx probably due to three-layered kind of its nature.
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Sofia A. Arzhannikova, Sofia A. Arzhannikova, Mikhail D. Efremov, Mikhail D. Efremov, Vladimir A. Volodin, Vladimir A. Volodin, Genadiy N. Kamaev, Genadiy N. Kamaev, Denis V. Marin, Denis V. Marin, Vladimir S. Shevchuk, Vladimir S. Shevchuk, Artem A. Vaschenkov, Artem A. Vaschenkov, Sergey A. Kochubei, Sergey A. Kochubei, Alexander A. Popov, Alexander A. Popov, Yuri A. Minakov, Yuri A. Minakov, } "Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiNx dielectrics", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702513 (29 April 2008); doi: 10.1117/12.802459; https://doi.org/10.1117/12.802459
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