29 April 2008 Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
Author Affiliations +
Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702517 (2008); doi: 10.1117/12.802480
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. I. Zebrev, M. S. Gorbunov, V. S. Pershenkov, "Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702517 (29 April 2008); doi: 10.1117/12.802480; https://doi.org/10.1117/12.802480
PROCEEDINGS
8 PAGES


SHARE
KEYWORDS
Oxides

Dielectrics

Transistors

Stochastic processes

Field effect transistors

Silica

Nanoelectronics

RELATED CONTENT

Noise characteristics of nanoscaled SOI MOSFETs
Proceedings of SPIE (January 08 2013)
Mesoscopic noise in VLSI devices
Proceedings of SPIE (May 08 2003)
Self heating as a tool for measuring sub 0.1 um...
Proceedings of SPIE (April 23 1998)

Back to Top