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29 April 2008 The spatial features AlxGa1-xN/GaN heterostructure
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702518 (2008) https://doi.org/10.1117/12.802481
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
Complex investigations of the epitaxial layers quality in AlxGa(1-x)N/GaN heterostructures grown on sapphire substrates by MBE and MOCVD methods were carried out with using of Double Crystal Diffractometry and optical microscope methods. The mobility and surface concentration of charge carriers were analyzed by means of the Hall effect method. It is shown that the blocks sizes of epitaxial layer grown by MBE method were smaller than separate blocks sizes grown by MOCVD method. On the base of Hall-effect measurements and X-diffractometry investigations it is determined band gap changing from Al-mol content into ALGaN layer. It has been received an experimental dependence of charge carries concentration from Al-mol content into analyzed structures.
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Kira L. Enisherlova, Rafik M. Immamov, I. M. Subbotin, T. F. Rusak, and E. M. Temper "The spatial features AlxGa1-xN/GaN heterostructure", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702518 (29 April 2008); https://doi.org/10.1117/12.802481
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