29 April 2008 Features of evolution of implanted profiles during RTA in non-isothermal reactor
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702519 (2008) https://doi.org/10.1117/12.802484
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The process of rapid annealing of implanted silicon wafers under non-isothermal conditions has been studied. It was established, applied temperature gradient ∇T gives rise to relative shift of non-isothermal concentration profiles, corresponding two opposite signs of this gradient. The value of the shift increases with increasing the value of ∇T and nonlinearly depends on the time durations of annealing process. It was established too, the dopant diffusion coefficient increases with increasing the ∇T in the vertical direction in the wafer regardless of ∇T sign. The estimation of thermodiffusion parameters was made. The coefficient of mass transfer of intrinsic non-equilibrium defects was introduced into the phenomenological equations of irreversible thermodynamics to explain anomalous high values of heat of transport. This coefficient allows for influence of generation-recombination processes related to intrinsic non-equilibrium defects on the dopant diffusion. The experimentally observed high values of diffusion coefficients and heat of transport are explained using this coefficient.
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Valery I. Rudakov, Alexander A. Victorov, Yuri I. Denisenko, Boris V. Mochalov, Vladimir V. Ovcharov, "Features of evolution of implanted profiles during RTA in non-isothermal reactor", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702519 (29 April 2008); doi: 10.1117/12.802484; https://doi.org/10.1117/12.802484
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