29 April 2008 Stable silicon resistors at 20-160°C due to divacancy involving high purity neutron doped Si
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251A (2008) https://doi.org/10.1117/12.802485
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
In the present work, the matter of stabilization of silicon conductivity versus temperature is discussed for neutron transmutation doped FZ silicon with point radiation defects. It is shown that divacancies introduced by electron irradiation decrease the room-temperature conductivity of the material, making the resistance simultaneously more stable to temperature variations in the temperature range 20 to 160°C. The discrepancy between experimental and simulated data was evaluated and corrected assuming the presence of a deep-level center with energy Ec-0.6 eV in the forbidden gap. As a result of the study, power resistors have been manufactured exhibiting less than 10-% variation of their resistance from nominal value in the indicated temperature range.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gennady N. Kamaev, Gennady N. Kamaev, Mikhail D. Efremov, Mikhail D. Efremov, Victor A. Stuchinsky, Victor A. Stuchinsky, Boris I. Mikhailov, Boris I. Mikhailov, Stepan G. Kurkin, Stepan G. Kurkin, } "Stable silicon resistors at 20-160°C due to divacancy involving high purity neutron doped Si", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251A (29 April 2008); doi: 10.1117/12.802485; https://doi.org/10.1117/12.802485
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