29 April 2008 Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251B (2008) https://doi.org/10.1117/12.802486
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The dual collector lateral bipolar magnetotransistor manufactured in the well with an external connection of contacts to the well and substrate has been investigated. Modern methods of device-technological simulation have been used to model the distribution of charge carriers, current densities, and recombination velocity. It is shown that bipolar magnetotransistor in the well have negative relative magnetic sensitivity due to the volumetric recombination mechanism.
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R. D. Tikhonov, "Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251B (29 April 2008); doi: 10.1117/12.802486; https://doi.org/10.1117/12.802486
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