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29 April 2008 Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251C (2008)
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
The experimental research initial disbalance potential collectors from the scheme of inclusion two-collector lateral bipolar magnetotransistor (BMT) NPN-type, generated in a well is lead. By means of device-technological modelling the mechanism of occurrence initial disbalance is investigated and the way of its reduction initial disbalance is certain at maintenance of preservation of high sensitivity. The choice of the operating mode bipolar magnetotransistor is based on the distributions of the emitter injected electron currents in two symmetrical base electrodes - two contacts to the base-well, in two contacts to a substrate, in two collectors. The mode of magnetotransistor based on the influence of a magnetic field. Reduction of initial disbalance allows to increase relative size of a output valid signal ΔU= UC1(B) - UC2(B) - UC1(0) + UC2(0).
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. D. Tikhonov, S. A. Polomoshnov, A. V. Kozlov, and A. Ju. Krasukov "Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251C (29 April 2008);


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