29 April 2008 Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251D (2008) https://doi.org/10.1117/12.802488
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
Self-formed conducting nanostructures are generated in "sandwich"-structures Si-SiO2-W with an open surface of an insulating slit because of an electroforming and find out effects of switching and memory. Switching is carried out by voltage impulses of certain amplitude and duration. Shortcomings of the "diode" cell of memory based on such structures are discussed and design of the "transistor" cell for improvement of its characteristics is offered. In this design the structure of the bipolar transistor is formed by the introduction of an additional n+-layer of silicon (emitter) so the memory element is integrated into the emitter. It has allowed to improve essentially all operational characteristics of a memory matrix: to reduce leakage currents; to increase breakdown voltage and so to increase recording speed due to using of faster switching process which requires higher voltage; to increase dimension of a matrix because of reduction of operating currents for silicon buses in inverse proportion to a transistor current gain; to increase stability of characteristics. Results of experimental samples tests of a memory matrix based on a "transistor" cell are presented.
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Victor M. Mordvintsev, Victor M. Mordvintsev, Sergey E. Kudrjavtsev, Sergey E. Kudrjavtsev, Valeriy L. Levin, Valeriy L. Levin, Ludmila A. Tsvetkova, Ludmila A. Tsvetkova, } "Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251D (29 April 2008); doi: 10.1117/12.802488; https://doi.org/10.1117/12.802488
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