29 April 2008 Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251L (2008) https://doi.org/10.1117/12.802533
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
The Monte Carlo model of electron transport in SOI MOSFETs is proposed. Both 2D and 3D conditions are considered. The Poisson equation and boundary conditions are presented for every case. Fully depleted SOI MOSFETs and partially depleted SOI MOSFETs are contradistinguished. The values of electron current as well as drift velocity in different parts of SOI MOSFETs channel are calculated by means of the Monte Carlo simulation. The SOI MOSFETs with the channel length equal to 0.5, 0.25 and 0.1 μm as well as the channel depth equal to 10, 20, 100, 200, 1000 nm are studied. Drift velocity as a function of the channel depth is obtained. It is shown that the function has a peak at the channel depth equal to 20 nm.
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Oleg Zhevnyak, Vladimir Borzdov, Andrey Borzdov, Dmitry Pozdnyakov, Fadei Komarov, "Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251L (29 April 2008); doi: 10.1117/12.802533; https://doi.org/10.1117/12.802533
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