29 April 2008 Modeling of powerful GaAs MESFET
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251N (2008) https://doi.org/10.1117/12.802535
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
In this paper modeling of powerful GaAs Metal Semiconductor Field Effect Transistor (MESFET) was carried out, I-V characteristics with breakdown voltage of MESFET were obtained. With the help of this model optimal characteristics of structure for power MESFET were determined. Recommendations for value of Schottky barrier were proposed. Also breakdown voltage was calculated. More over temperature dependencies of I-V characteristics of MESFET were studied.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Shestakov, A. Shestakov, A. Myasnikov, A. Myasnikov, K. Zhuravlev, K. Zhuravlev, } "Modeling of powerful GaAs MESFET", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251N (29 April 2008); doi: 10.1117/12.802535; https://doi.org/10.1117/12.802535

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