29 April 2008 A new model for the copper CMP kinetics
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Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 70251Q (2008) https://doi.org/10.1117/12.802538
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation
Abstract
A new model for copper chemical mechanical polishing (CMP) process in the (K3Fe(CN)6+NH4OH) slurry is developed in the work. A distinctive peculiarity of the model is quantitative consideration of the kinetics of the passivating layer growth and accounting of its action on the polishing rate. In accordance with the model the main stages of copper CMP are the Cu+ ion diffusion and tunneling of copper conductivity electrons through the passivating layer towards its interface with the slurry, as well as chemical reactions in the slurry at the passivating layer surface resulting in growth of its thickness and formation of dissoluble compounds removed from the system. The closed set of equations of the CMP kinetics is derived. Its solutions are obtained for the steady-state regime as to the chemical reactions in two limiting cases when Cu+ ion diffusion through the passivating layer predominates over their electromigration or vice versa. The estimates of the CMP rate and limiting values of passivating layer thickness for these two modes are carried out and give reasonable results which correlate with experimental data.
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R. Goldstein, T. Makhviladze, M. Sarychev, "A new model for the copper CMP kinetics", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 70251Q (29 April 2008); doi: 10.1117/12.802538; https://doi.org/10.1117/12.802538
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