19 December 2008 Pulsed-laser deposition of ZnO thin films and nanorods for photonic devices
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Proceedings Volume 7027, 15th International School on Quantum Electronics: Laser Physics and Applications; 70270A (2008) https://doi.org/10.1117/12.822447
Event: 15th International School on Quantum Electronics: Laser Physics and Applications, 2008, Bourgas, Bulgaria
Abstract
ZnO thin film growth and ZnO nanorods growth on a Si (100) substrate through a two-step, off-axis pulsed laser deposition (PLD) are reported. ZnO morphologies were measured and the post-annealed ZnO films grown at Tg = 700 °C had very smooth surfaces and the rms roughness was about 0.5 nm. Finally, ZnO post-annealed buffer layer was inserted between ZnO epi-layer and GaN/sapphire substrates. It was confirmed by cathode luminescence (CL) spectrum that the ZnO film grown at 700 °C had very low visible luminescence, which means a decrease of the deep level defects. In the case of ZnO nanorods, controlling growth parameters during deposition enabled to adjust the dimensions of nanorods. The diameters of the grown nanorods ranged from 50 to 700 nm and the lengths are from 2 to 10 μm. The CL spectra were used to evaluate the states of defects within the ZnO nanorods. According to the CL results, the thinnest nanorod arrays were found to have fewer defects, while more defects were inserted as nanorods became thicker.
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Tatsunori Sakano, Ryo Nishimura, Hiroki Fukuoka, Yoshihiro Yata, Toshiharu Saiki, Minoru Obara, "Pulsed-laser deposition of ZnO thin films and nanorods for photonic devices", Proc. SPIE 7027, 15th International School on Quantum Electronics: Laser Physics and Applications, 70270A (19 December 2008); doi: 10.1117/12.822447; https://doi.org/10.1117/12.822447
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