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19 May 2008 The ultimate chrome absorber in photomask making
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702804 (2008) https://doi.org/10.1117/12.793013
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
193nm-immersion lithography is the most promising technology for 32nm-node device fabrication. A new Cr absorber (TFC) for 193-nm attenuated phase-shift blanks was developed to meet the photomask requirements without any additional process step, such as hardmask etching. TFC was introduced with a design concept of the vertical profile for shorter etching time, the over etching time reduction. As a result, the dry-etching time was dramatically improved by more than 20% shorter than the conventional Cr absorber (TF11) without any process changes. We confirmed that 150nm-resist thickness was possible by TFC. The 32nm technology-node requirement is fully supported by TFC with thinner CAR, such as resolution and CD performance.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masahiro Hashimoto, Hiroyuki Iwashita, Atsushi Kominato, Hiroaki Shishido, Masao Ushida, and Hideaki Mitsui "The ultimate chrome absorber in photomask making", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702804 (19 May 2008); https://doi.org/10.1117/12.793013
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