19 May 2008 Advanced damage-free photomask cleaning for 45/32nm technology nodes
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702808 (2008) https://doi.org/10.1117/12.793017
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
High particle removal efficiency (PRE) up to 99%+ without damage to sub-50 nm linewidth features has been demonstrated using a mixed fluid jet technology and sulfur-free chemistry. This high PRE was achieved with several types of deposited particles, including polystyrene latex spheres. Damage-free cleaning was demonstrated on binary and phase shift masks with Cr and MoSi structures. All masks were processed using the TetraTM mask cleaning tool configured with the NanoDropletTM mixed fluid jet technology.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roman Gouk, Jason Jeon, Fred Li, James Papanu, Banqiu Wu, Rao Yalamanchili, "Advanced damage-free photomask cleaning for 45/32nm technology nodes", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702808 (19 May 2008); doi: 10.1117/12.793017; https://doi.org/10.1117/12.793017
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